Conference Paper, 2024

Modeling and Simulation for DRAM and Flash Memory Technology Exploration and Development

2024 IEEE International Memory Workshop Imw 2024 Proceedings, ISBN 9798350306521, 10.1109/IMW59701.2024.10536984

Contributors

Lin X.-W. (Corresponding author) [1] Amoroso S.M. [2] Lee K.-H. Ke M.H. Gunst T. 0000-0002-3000-5940 [3] Tikhomirov P. Asenov P. [2]

Affiliations

  1. [1] Synopsys
    2. [NORA names: United States; America, North; OECD];
  2. [2] Synopsys Northern Europe
    3. [NORA names: United Kingdom; Europe, Non-EU; OECD];
  3. [3] Synopsys Denmark
    4. [NORA names: Other Companies; Private Research; Denmark; Europe, EU; Nordic; OECD]

Abstract

Modeling and simulation is increasingly critical to memory technology exploration and development, as relentless scaling demands innovation, pushes the limits of physics, and increases the risk and cost of making architectural choices. Examples are given to demonstrate the value of multiscale, multi-physics modeling of complex problems, including a) row hammer and 4F2 floating body effects in DRAM; b) RTN and program noise in 3D NAND; c) 3D unit process, integration, and wafer warpage; and d) Vth engineering at the atomic level.

Keywords

3D DRAM, 3D NAND, 4F2, DRAM, RTN, TCAD, ab initio, floating body effect, program noise, row hammer, simulations, variability, vertical channel transistor, wafer warpage

Data Provider: Elsevier

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