Article,
Mid-Infrared, Optically Active Black Phosphorus Thin Films on Centimeter Scale
Affiliations
- [1] Lawrence Berkeley National Laboratory [NORA names: United States; America, North; OECD];
- [2] Department of Electrical Engineering and Computer Sciences [NORA names: United States; America, North; OECD];
- [3] National Institute for Materials Science [NORA names: Japan; Asia, East; OECD];
- [4] University of California [NORA names: United States; America, North; OECD];
- [5] University of Southern Denmark [NORA names: SDU University of Southern Denmark; University; Denmark; Europe, EU; Nordic; OECD]
Abstract
Black phosphorus (BP) is a narrow bandgap (∼0.3 eV) semiconductor with a great potential for optoelectronic devices in the mid-infrared wavelength. However, it has been challenging to achieve a high-quality scalable BP thin film. Here we present the successful synthesis of optically active BP films on a centimeter scale. We utilize the pulsed laser deposition of amorphous red phosphorus, another allotrope of phosphorus, followed by a high-pressure treatment at ∼8 GPa to induce a phase conversion into BP crystals. The crystalline quality was improved through thermal annealing, resulting in the observation of photoluminescence emission at mid-infrared wavelengths. We demonstrate high-pressure conversion on a centimeter scale with a continuous film with a thickness of ∼18 nm using a flat-belt-type high-pressure apparatus. This synthesis procedure presents a promising route to obtain optical-quality BP films, enabling the exploration of integrated optoelectronic device applications such as light-emitting devices and mid-infrared cameras on a chip scale.