Article, 2024

Effective Gating in Single-Molecule Junctions through Fano Resonances

Journal of the American Chemical Society, ISSN 0002-7863, 1520-5126, Volume 146, 6, Pages 3646-3650, 10.1021/jacs.3c14226

Contributors

Prindle C.R. 0009-0008-4111-3550 [1] Shi W. 0000-0003-2103-9185 [1] Li L. 0000-0003-3890-7276 [1] Dahl Jensen J. 0000-0002-8163-1482 [2] Laursen B.W. 0000-0002-1120-3191 [2] Steigerwald M.L. [1] Nuckolls C. 0000-0002-0384-5493 (Corresponding author) [1] Venkataraman L. 0000-0002-6957-6089 (Corresponding author) [1]

Affiliations

  1. [1] Columbia University
  2. [NORA names: United States; America, North; OECD];
  3. [2] University of Copenhagen
  4. [NORA names: KU University of Copenhagen; University; Denmark; Europe, EU; Nordic; OECD]

Abstract

The successful incorporation of molecules as active circuit elements relies on the ability to tune their electronic properties through chemical design. A synthetic strategy that has been used to manipulate and gate circuit conductance involves attaching a pendant substituent along the molecular conduction pathway. However, such a chemical gate has not yet been shown to significantly modify conductance. Here, we report a novel series of triarylmethylium and triangulenium carbocations gated by different substituents coupled to the delocalized conducting orbitals on the molecular backbone through a Fano resonance. By changing the pendant substituents to modulate the position of the Fano resonance and its coupling to the conducting orbitals, we can regulate the junction conductance by a remarkable factor of 450. This work thus provides a new design principle to enable effective chemical gating of single-molecule devices toward effective molecular transistors.

Funders

  • National Defense Science and Engineering Graduate
  • United States-Israel Binational Science Foundation
  • National Science Foundation

Data Provider: Elsevier