Hierarchical modeling for TCAD simulation of short-channel 2D material-based FETs

An integrated hierarchical modeling flow for fast analysis and prototyping of 2D material-based field-effect transistors (FETs) is presented. Advanced transport simulators using ab initio atomistic density functional theory (DFT) and continuum effective mass non-equilibrium Green's Functions (NEGF) consistently provide TCAD tools with device material and component parameters and reference curves for physical model selection and calibration. We validate each step of the hierarchical flow, and we show that the simulations performed with the resulting TCAD setup accurately predict 2D-FETs device characteristics.